cystech electronics corp. spec. no. : c 972dfj6 issued date : 20 15.04.01 revised date : 2015.09.03 page no. : 1 / 9 m tb010 n0 2dfj6 cyste k product specification 2 5 v n - channel enhancement mode mosfet mtb010n 0 2dfj6 features ? low on - resistance ? excellent thermal and electrical capabilities ? pb - free lead plating and halogen - free package equ ivalent circuit outline ordering information device package shipping MTB010N02DFJ6 - 0 - t1 - g dfnwb2 2 - 6l - j ( pb - free lead plating and halogen - free package ) 3000 pcs / tape & reel MTB010N02DFJ6 dfnwb2 g gate s sour c e d drain bv dss 25v i d @v gs =10v, t c =25 c 18.2a i d @v gs =10v, t a =25 c 8.8a r dson @v gs =10v, i d =8.5a 10.9m (typ.) r dson @v gs =4.5v, i d =6.8a 15.3m (typ.) environment friendly grade : s for rohs compliant products, g for rohs compliant an d green compound products packing spec, t1 : 3000 pcs / tape & reel,7 reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c 972dfj6 issued date : 20 15.04.01 revised date : 2015.09.03 page no. : 2 / 9 m tb010 n0 2dfj6 cyste k product specification absolute maximum ratings (ta=25 ? c) parameter symbol limits unit drain - sour c e voltage v ds 2 5 v gate - source voltage v gs 20 continuous drain current @ t a =25 ? c , v gs =10v (note 3) i dsm 8.8 a continuous drain current @ t a =70 ? c , v gs =10v (note 3) 7.0 continuous drain current @ t c =25 ? c , v gs =10v i d 18.2 continuous drain current @ t c =70 ? c , v gs =10v 14.6 pulsed drain current (note 1, 2) i dm 72 power dissipation @ t a =25 (note 3) p d sm 2.1 w power dissipation @ t a = 70 (note 3) 1.3 power dissipation @ t c =25 p d 8.9 power dissipation @ t c = 70 5.7 operating junction and storage temperature tj , tstg - 55~+150 ? c thermal data parameter symbol value unit thermal resistance, junction - to - case, max r th,j - c 14 ? c /w thermal resistance, junction - to - ambient, max r th,j - a 60 (note 3) note : 1. pulse width limited by maximum junction temperature 2. duty cycle 1% 3. surface mounted on 1 in 2 copper pad of fr - 4 board . electrical characteristics (ta=25 ? symbol min. typ. max. unit test conditions static bv dss 2 0 - - v v gs =0v, i d = 25 0 a v gs(th) 1 - 2.35 v v ds =v gs , i d = 25 0 a i gss - - 10 0 n a v gs = 20 v , v ds =0v i dss - - 1 a v ds =2 0 v, v gs =0v - - 10 a v ds =20v, v gs =0v, tj=55 ? c * r ds(on) - 10.9 14.2 m ? v gs =10v, i d = 8.5 a - 15.3 20 v gs =4 .5 v, i d = 6.8 a *g fs - 7 - s v ds =5v , i d =8.5a dynamic ciss - 539 - pf v ds =10v, v gs =0, f=1mhz coss - 104 - crss - 85 - t d(on) - 10.2 - ns v d d = 13 v, i d = 8.5 a, v g s = 4.5 v, r g = 1.8 t r - 21 - t d(off) - 21.6 - t f - 11.2 -
cystech electronics corp. spec. no. : c 972dfj6 issued date : 20 15.04.01 revised date : 2015.09.03 page no. : 3 / 9 m tb010 n0 2dfj6 cyste k product specification qg (v gs = 1 0 v) - 13 - nc v ds = 13 v, i d = 8.5 a, v gs = 10 v qg (v gs = 4 . 5 v) - 6.7 - qgs - 1.8 - qgd - 3.0 - rg - 4.7 - ? f=1mhz source - dra in diode * v sd - 0.87 1. 0 v v gs =0v, i s = 8.5 a *trr - 5.9 - ns i f =8.5a, di f /dt=280a/ s *qrr - 3.9 - nc *pulse test : pulse width ? 300s, duty cycle ? 2% recommended soldering footprint
cystech electronics corp. spec. no. : c 972dfj6 issued date : 20 15.04.01 revised date : 2015.09.03 page no. : 4 / 9 m tb010 n0 2dfj6 cyste k product specification t ypical characteristics typical output characteristics 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 6 7 8 9 10 v ds , drain-source voltage(v) i d , drain current (a) v gs =3.5v v gs =2.5v v gs =3v v gs =4v v gs =5v 10v,9v, 8v, 7v, 6v brekdown voltage vs ambient temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 0 10 20 30 40 50 60 70 80 90 100 0.1 1 10 100 i d , drain current(a) r ds( o n ) , static drain-source on-state resistance(m) v gs =3v v gs =4.5v v gs =10v reverse drain current vs source-drain voltage 0 0.2 0.4 0.6 0.8 1 0 1 2 3 4 5 6 7 8 9 10 i dr , reverse drain current (a) v sd , source-drain voltage(v) tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =8.5a drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =8.5a r ds(on) @tj=25c : 10.9m typ.
cystech electronics corp. spec. no. : c 972dfj6 issued date : 20 15.04.01 revised date : 2015.09.03 page no. : 5 / 9 m tb010 n0 2dfj6 cyste k product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(t h) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) ta=25c pulsed v ds =5v maximum drain current vs case temperature 0 5 10 15 20 25 25 50 75 100 125 150 175 t c , case temperature(c) i d , maxim um drain current(a) v gs =10v, r jc =14c/w maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current (a) dc 10ms 100ms 1ms 100 s t a =25c, tj=150c, v gs =10v, r jc =14c/w single pulse gate charge characteristics 0 2 4 6 8 10 0 2 4 6 8 10 12 14 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =8.5a v ds =5v v ds =20v v ds =13v
cystech electronics corp. spec. no. : c 972dfj6 issued date : 20 15.04.01 revised date : 2015.09.03 page no. : 6 / 9 m tb010 n0 2dfj6 cyste k product specification typical characteristics(cont.) typical transfer characteristics 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 6 v gs , gate-source voltage(v) i d , drain current (a) v ds =10v single pulse power rating, junction to case 0 100 200 300 400 500 600 700 800 900 1000 0.0001 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t c =25c r jc =14c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r jc (t)=r(t)*r jc 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *z jc (t) 4.r jc =14 c/w
cystech electronics corp. spec. no. : c 972dfj6 issued date : 20 15.04.01 revised date : 2015.09.03 page no. : 7 / 9 m tb010 n0 2dfj6 cyste k product specification reel dimension carrier tape dimension pin #1
cystech electronics corp. spec. no. : c 972dfj6 issued date : 20 15.04.01 revised date : 2015.09.03 page no. : 8 / 9 m tb010 n0 2dfj6 cyste k product specification recommended wave soldering condition product peak temperature soldering time pb - free devices 260 +0/ - 5 ? c 5 +1/ - 1 seconds recommended temp erature profile for ir reflow profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (tsmax to tp) 3 ? c /second max. 3 ? c /second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 ? c 150 ? c 60 - 120 seconds 150 ? c 200 ? c 60 - 180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 ? c 60 - 150 seconds 217 ? c 60 - 150 seconds peak temperature(t p ) 240 +0/ - 5 ? c 260 +0/ - 5 ? c time within 5 ? c of actual peak temperature(tp) 10 - 30 seconds 20 - 40 seconds ramp down rate 6 ? c /second max. 6 ? c /second max. time 25 ? c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of th e package, measured on the package body surface.
cystech electronics corp. spec. no. : c 972dfj6 issued date : 20 15.04.01 revised date : 2015.09.03 page no. : 9 / 9 m tb010 n0 2dfj6 cyste k product specification dfnwb2 dim millimeters inches dim millimeters inches min. max. min. max. min. max. min. max. a 0. 700 0. 800 0.028 0.031 d2 0.200 0.400 0.008 0.016 a1 0.0 0 0 0.0 50 0.00 0 0.002 e2 0.460 0.660 0.018 0.026 a3 0. 203 ref 0. 008 ref k 0.200 - 0.008 - d 1.924 2.076 0. 076 0. 082 b 0.250 0.350 0.010 0.014 e 1.924 2.076 0. 076 0. 082 e 0.650 typ 0.026 typ d1 0. 800 1.000 0.0 31 0. 039 l 0.174 0.326 0.007 0.013 e1 0.850 1.050 0.033 0.041 notes: 1. controlling dimension: millimeters. 2 . maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please contact your local cyste k sales office. material: ? ? mold compound: epoxy resin family, flammability solid burning class: ul94v - 0 . important notice: ? all rights are reserved. reproduction in whole or i n part is prohibited without the prior written approval of cyste k . ? cyste k reserves the right to make changes to its products without notice. ? cyste k semiconductor products are not warranted to be suitable for use in life - support applications, or systems . ? cyste k assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. marking: style: pin 1. drain 2. drain 3. gate 4.source 5.drain 6.drain 6 - lead dfnwb2 2 - 6l - j plastic surface mounted pack age cyste k package code: dfj6 bt02 device code date code
|
